SI1011X-T1-GE3
MOSFET P-CH 12V SC89-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI1011X-T1-GE3, a P-Channel TrenchFET® MOSFET, offers a 12 V drain-source voltage and a continuous drain current of 480mA at 25°C (Ta). This device features a maximum power dissipation of 190mW (Ta) and a low on-resistance of 640mOhm at 400mA, 4.5V Vgs. The SC-89-3 package facilitates surface mounting applications. Key electrical characteristics include a gate charge of 4 nC at 4.5 V and an input capacitance of 62 pF at 6 V. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for use in power management and battery-powered equipment.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 480mA (Ta) |
| Rds On (Max) @ Id, Vgs | 640mOhm @ 400mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 190mW (Ta) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | SC-89-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 62 pF @ 6 V |
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