SI1002R-T1-GE3
MOSFET N-CH 30V 610MA SC75AManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, part number SI1002R-T1-GE3. This device offers a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 610mA at 25°C. Designed for surface mounting in the SC-75A package, it features a maximum power dissipation of 220mW (Ta). The Rds On is specified at 560mOhm maximum at 500mA and 4.5V gate-source voltage (Vgs). Key electrical characteristics include a maximum gate charge (Qg) of 2nC and input capacitance (Ciss) of 36pF. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in consumer electronics and industrial control systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75A |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 610mA (Ta) |
| Rds On (Max) @ Id, Vgs | 560mOhm @ 500mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 220mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-75A |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 36 pF @ 15 V |
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