MXP120A080FW-GE3
SILICON CARBIDE MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MaxSiC™ N-Channel MOSFET, part number MXP120A080FW-GE3, offers a 1200V drain-to-source breakdown voltage and a continuous drain current capability of 29A at 25°C (Tc). This through-hole TO-247-3L package component features a low on-resistance of 100mOhm maximum at 20A, 20V. The device utilizes Silicon Carbide junction transistor technology, enabling high-efficiency operation. Key parameters include a maximum power dissipation of 139W (Tc), input capacitance (Ciss) of 1156pF at 800V, and gate charge (Qg) of 47.3nC at 18V. The operating temperature range is -55°C to 150°C (TJ). This power MOSFET is suitable for applications in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: MaxSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 139W (Tc) |
| Vgs(th) (Max) @ Id | 2.69V @ 5mA |
| Supplier Device Package | TO-247-3L |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 47.3 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1156 pF @ 800 V |
| Qualification | - |