MXP120A045FW-GE3
SILICON CARBIDE MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MaxSiC™ N-Channel MOSFET, part number MXP120A045FW-GE3, is a 1200V Silicon Carbide power device in a TO-247-3L through-hole package. It offers a continuous drain current of 49A (Tc) and a maximum power dissipation of 227W (Tc). This device features a low on-resistance of 56mOhm at 20A and 20V gate-source voltage. The input capacitance (Ciss) is 1958pF at 800V, and the gate charge (Qg) is 75.6nC at 18V. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for high-efficiency power conversion applications in industries such as renewable energy, electric vehicles, and industrial power supplies.
Additional Information
Series: MaxSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 227W (Tc) |
| Vgs(th) (Max) @ Id | 2.38V @ 5mA |
| Supplier Device Package | TO-247-3L |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 75.6 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1958 pF @ 800 V |
| Qualification | - |
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