IRLZ34SPBF
MOSFET N-CH 60V 30A TO263Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRLZ34SPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 60V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 30A at 25°C (Tc). With a low on-resistance (Rds On) of 50mOhm maximum at 18A and 5V Vgs, it minimizes conduction losses. The device is housed in a TO-263 (D2PAK) surface-mount package, facilitating robust thermal management with a power dissipation of up to 88W (Tc). Key electrical parameters include a gate charge (Qg) of 35 nC maximum at 5V Vgs and input capacitance (Ciss) of 1600 pF maximum at 25V Vds, suitable for demanding switching frequencies. Operating temperature range is from -55°C to 175°C (TJ). This MOSFET is widely utilized in industrial, automotive, and power supply applications requiring reliable power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 18A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 88W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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