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IRLZ34S

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IRLZ34S

MOSFET N-CH 60V 30A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRLZ34S is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 30A at 25°C (Tc). The low on-resistance (Rds On) of 50mOhm at 18A and 5V gate drive makes it suitable for demanding power conversion circuits. With a maximum power dissipation of 88W at 25°C (Tc), it offers robust thermal performance. The IRLZ34S utilizes Surface Mount technology, packaged in a TO-263 (D2PAK) configuration, facilitating automated assembly. Key electrical characteristics include a maximum gate charge (Qg) of 35 nC at 5V and input capacitance (Ciss) of 1600 pF at 25V. This MOSFET is commonly employed in industrial automation, automotive power management, and high-power DC-DC converters.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs50mOhm @ 18A, 5V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 25 V

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