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IRLZ34PBF-BE3

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IRLZ34PBF-BE3

MOSFET N-CH 60V 30A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRLZ34PBF-BE3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 60V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 30A at 25°C (Tc), with a maximum power dissipation of 88W (Tc). The Rds(On) is specified at a low 50mOhm maximum at 18A and 5V Vgs. Key parameters include a gate charge (Qg) of 35nC maximum at 5V Vgs and an input capacitance (Ciss) of 1600pF maximum at 25V Vds. The device operates within a temperature range of -55°C to 175°C (TJ). Packaged in a TO-220AB through-hole configuration, this MOSFET is suitable for use in industrial, automotive, and power supply applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs50mOhm @ 18A, 5V
FET Feature-
Power Dissipation (Max)88W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-220AB
Vgs (Max)±10V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 25 V

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