Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

IRLZ34L

Banner
productimage

IRLZ34L

MOSFET N-CH 60V 30A TO262-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRLZ34L. This N-Channel Power MOSFET offers a robust 60V drain-source voltage and a continuous drain current capability of 30A at 25°C (Tc). Featuring a low on-resistance of 50mOhm maximum at 18A and 5V gate drive, it is optimized for efficient switching. The device exhibits a gate charge of 35 nC maximum at 5V Vgs, and input capacitance (Ciss) is rated at 1600 pF maximum at 25V Vds. With a maximum power dissipation of 88W at 25°C (Tc), it is suitable for high-power applications. The TO-262-3 package with long leads ensures reliable through-hole mounting. Operating temperature range is from -55°C to 175°C (TJ). This component is commonly found in industrial and power control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs50mOhm @ 18A, 5V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-262-3
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
SIJH5700E-T1-GE3

N-CHANNEL 150 V (D-S) 175C MOSFE

product image
SIHA14N60E-GE3

N-CHANNEL 600V

product image
IRL540S

MOSFET N-CH 100V 28A D2PAK