Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

IRLZ34

Banner
productimage

IRLZ34

MOSFET N-CH 60V 30A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRLZ34 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 30A at 25°C case temperature, with a maximum power dissipation of 88W (Tc). The Rds(on) is specified at a maximum of 50mOhm at 18A and 5V gate-source voltage. Key parameters include a gate charge (Qg) of 35nC (max) at 5V and input capacitance (Ciss) of 1600pF (max) at 25V. The MOSFET is housed in a TO-220AB package, suitable for through-hole mounting. Its operating temperature range is -55°C to 175°C (TJ). This device is commonly utilized in industrial power supplies, motor control, and automotive electronics.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs50mOhm @ 18A, 5V
FET Feature-
Power Dissipation (Max)88W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
SIJH5700E-T1-GE3

N-CHANNEL 150 V (D-S) 175C MOSFE

product image
SIHA14N60E-GE3

N-CHANNEL 600V

product image
IRL540S

MOSFET N-CH 100V 28A D2PAK