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IRLZ24SPBF

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IRLZ24SPBF

MOSFET N-CH 60V 17A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRLZ24SPBF is an N-Channel MOSFET designed for power switching applications. This component offers a 60V drain-source breakdown voltage and a continuous drain current capability of 17A at 25°C (Tc). The IRLZ24SPBF features a low on-resistance of 100mOhm maximum at 10A and 5V Vgs. With a gate charge of 18nC at 5V and an input capacitance of 870pF at 25V, it is suitable for moderate switching frequency designs. Power dissipation is rated at 60W (Tc) and 3.7W (Ta). The device is packaged in a TO-263-3, D2PAK surface-mount package and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in industrial, automotive, and consumer electronics power management circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Rds On (Max) @ Id, Vgs100mOhm @ 10A, 5V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds870 pF @ 25 V

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