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IRLZ24S

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IRLZ24S

MOSFET N-CH 60V 17A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRLZ24S is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 17A at 25°C (Tc). The low on-resistance (Rds On) of 100mOhm is achieved at 10A and 5V gate drive. Key parameters include a maximum Gate Charge (Qg) of 18 nC at 5V and an Input Capacitance (Ciss) of 870 pF at 25V. The device offers a maximum power dissipation of 60W (Tc), with 3.7W (Ta), and operates over a temperature range of -55°C to 175°C. Packaged in a TO-263 (D2PAK) surface mount configuration, this MOSFET is suitable for industrial, automotive, and power supply applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Rds On (Max) @ Id, Vgs100mOhm @ 10A, 5V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds870 pF @ 25 V

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