IRLZ24PBF-BE3
MOSFET N-CH 60V 17A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRLZ24PBF-BE3 is an N-Channel power MOSFET designed for high-efficiency switching applications. Featuring a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 17A at 25°C, this component offers a low on-resistance (Rds On) of 100mOhm at 10A and 5V Vgs. Its gate charge (Qg) is a maximum of 18 nC at 5V, with input capacitance (Ciss) at 870 pF @ 25V. The device is packaged in a TO-220AB through-hole package, allowing for a maximum power dissipation of 60W. Operating temperatures range from -55°C to 175°C (TJ). This MOSFET is suitable for use in power supply, motor control, and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |
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