IRLZ24L
MOSFET N-CH 60V 17A TO262-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRLZ24L is an N-Channel Power MOSFET designed for demanding applications. This component offers a 60V drain-source breakdown voltage and a continuous drain current capability of 17A at 25°C (Tc). The low on-resistance of 100mOhm at 10A and 5V gate drive minimizes conduction losses. Key parameters include a typical gate charge of 18nC @ 5V and input capacitance of 870pF @ 25V. With a maximum power dissipation of 60W (Tc), this TO-262-3 packaged device is suitable for through-hole mounting. The operating temperature range is -55°C to 175°C (TJ). This component finds application in industrial, automotive, and power supply sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 60W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |
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