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IRLZ14STRR

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IRLZ14STRR

MOSFET N-CH 60V 10A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRLZ14STRR is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 10A at 25°C (Tc). The low on-resistance of 200mOhm is achieved at 6A and 5V gate-source voltage, with a typical drive voltage range of 4V to 5V. With a maximum power dissipation of 3.7W (Ta) and 43W (Tc), this MOSFET is suitable for power switching and motor control circuits. The device is housed in a surface-mount TO-263-3 (D2PAK) package, facilitating efficient thermal management and automated assembly. Operating temperature range is from -55°C to 175°C (TJ). This MOSFET is commonly employed in industrial automation, power supplies, and automotive systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Rds On (Max) @ Id, Vgs200mOhm @ 6A, 5V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds400 pF @ 25 V

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