IRLZ14S
MOSFET N-CH 60V 10A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRLZ14S is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 10A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 200mOhm maximum at 6A and 5V gate drive. Key parameters include a gate charge (Qg) of 8.4 nC maximum at 5V and input capacitance (Ciss) of 400 pF maximum at 25V. With a maximum power dissipation of 43W at 25°C (Tc), the IRLZ14S is suitable for demanding power management tasks. The TO-263-3 (D2PAK) surface mount package facilitates integration into compact designs. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in industrial, automotive, and power supply applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 6A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 43W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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