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IRLZ14L

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IRLZ14L

MOSFET N-CH 60V 10A TO262-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRLZ14L is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 10A at 25°C (Tc). The Rds(on) is specified at a maximum of 200mOhm at 6A and 5V gate-source voltage, with a typical drive voltage range of 4V to 5V. Key parameters include a gate charge (Qg) of 8.4 nC at 5V and input capacitance (Ciss) of 400 pF at 25V. The device offers a power dissipation of 43W (Tc) and 3.7W (Ta). It is packaged in a TO-262-3 (I2PAK, TO-262AA) with long leads for through-hole mounting. The operating temperature range is from -55°C to 175°C (TJ). This MOSFET is commonly utilized in industrial automation, power supply units, and motor control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Rds On (Max) @ Id, Vgs200mOhm @ 6A, 5V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-262-3
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds400 pF @ 25 V

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