IRLZ14
MOSFET N-CH 60V 10A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix N-Channel Power MOSFET, part number IRLZ14. This TO-220AB packaged device features a 60V drain-to-source voltage and a continuous drain current of 10A at 25°C. With a maximum on-resistance of 200mOhm at 6A and 5V gate-source voltage, it offers efficient power switching. Key parameters include a gate charge of 8.4 nC at 5V and input capacitance of 400 pF at 25V. The device supports a gate-source voltage range of ±10V and a threshold voltage of 2V at 250µA. Rated for 43W of power dissipation at case temperature, the IRLZ14 is suitable for applications in industrial and computing power supplies. Operating temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 6A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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