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IRLU120PBF

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IRLU120PBF

MOSFET N-CH 100V 7.7A TO251AA

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRLU120PBF is an N-Channel power MOSFET designed for general-purpose switching applications. This component features a drain-source voltage (Vds) of 100 V and a continuous drain current (Id) of 7.7 A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 270 mOhm at 4.6 A and 5 V gate-source voltage (Vgs). With a gate charge (Qg) of 12 nC at 5 V and input capacitance (Ciss) of 490 pF at 25 V, it offers efficient switching characteristics. The MOSFET is housed in a TO-251AA package for through-hole mounting. Power dissipation is rated at 2.5 W (Ta) and 42 W (Tc). Operating temperature range is -55°C to 150°C. This component is utilized in industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.7A (Tc)
Rds On (Max) @ Id, Vgs270mOhm @ 4.6A, 5V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-251AA
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds490 pF @ 25 V

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