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IRLR120TRRPBF

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IRLR120TRRPBF

MOSFET N-CH 100V 7.7A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRLR120TRRPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 7.7 A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 270 mOhm at 4.6 A and 5 V gate drive. With a gate charge (Qg) of 12 nC maximum at 5 V, it offers optimized switching performance. The device is packaged in a TO-252-3, DPAK (SC-63) surface-mount package, facilitating automated assembly. It supports a maximum power dissipation of 42 W at 25°C (Tc). Operating temperature ranges from -55°C to 150°C (TJ). The IRLR120TRRPBF is suitable for use in power supply, motor control, and industrial automation sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.7A (Tc)
Rds On (Max) @ Id, Vgs270mOhm @ 4.6A, 5V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds490 pF @ 25 V

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