IRLR120TRRPBF
MOSFET N-CH 100V 7.7A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRLR120TRRPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 7.7 A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 270 mOhm at 4.6 A and 5 V gate drive. With a gate charge (Qg) of 12 nC maximum at 5 V, it offers optimized switching performance. The device is packaged in a TO-252-3, DPAK (SC-63) surface-mount package, facilitating automated assembly. It supports a maximum power dissipation of 42 W at 25°C (Tc). Operating temperature ranges from -55°C to 150°C (TJ). The IRLR120TRRPBF is suitable for use in power supply, motor control, and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 4.6A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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