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IRLR120TRPBF

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IRLR120TRPBF

MOSFET N-CH 100V 7.7A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRLR120TRPBF is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 7.7A at 25°C (Tc). The low on-resistance of 270mOhm at 4.6A and 5V (Vgs) minimizes conduction losses. With a gate charge (Qg) of 12nC at 5V and input capacitance (Ciss) of 490pF at 25V, it facilitates fast switching speeds. The device offers a maximum power dissipation of 42W (Tc) and 2.5W (Ta). Operating across a temperature range of -55°C to 150°C (TJ), the IRLR120TRPBF is housed in a surface mount DPAK (TO-252-3) package, supplied on tape and reel. This MOSFET is suitable for use in industrial automation, power supplies, and motor control applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.7A (Tc)
Rds On (Max) @ Id, Vgs270mOhm @ 4.6A, 5V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds490 pF @ 25 V

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