IRLR120TRLPBF
MOSFET N-CH 100V 7.7A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRLR120TRLPBF is a 100V N-Channel power MOSFET designed for high-efficiency switching applications. This component features a continuous drain current (Id) of 7.7A (Tc) and a maximum power dissipation of 42W (Tc), making it suitable for demanding power management tasks. The IRLR120TRLPBF utilizes advanced trench technology for low Rds(on) characteristics, specified at 270mOhm maximum at 4.6A and 5V Vgs. Key parameters include a gate charge (Qg) of 12 nC maximum at 5V and an input capacitance (Ciss) of 490 pF maximum at 25V.
This MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, optimized for thermal performance. The operating temperature range is from -55°C to 150°C (TJ). Drive voltages for optimal Rds(on) are between 4V and 5V, with a maximum gate-source voltage (Vgs) of ±10V. The Vishay Siliconix IRLR120TRLPBF is commonly employed in industrial, automotive, and consumer electronics for power conversion, motor control, and load switching. The part number is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 4.6A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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