IRLR120PBF
MOSFET N-CH 100V 7.7A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRLR120PBF is a N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) capability of 7.7 A at 25°C (Tc). The device exhibits a maximum On-Resistance (Rds On) of 270 mOhm at 4.6 A and 5 V gate drive. Key parameters include a gate charge (Qg) of 12 nC at 5 V and input capacitance (Ciss) of 490 pF at 25 V. With a maximum power dissipation of 42 W at 25°C (Tc), the IRLR120PBF is suitable for surface mount integration in a TO-252-3, DPAK package. Operating temperature ranges from -55°C to 150°C. This MOSFET is commonly utilized in industrial automation, power supplies, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 4.6A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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