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IRLR024TRLPBF

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IRLR024TRLPBF

MOSFET N-CH 60V 14A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRLR024TRLPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage and supports a continuous drain current of 14A at 25°C (Tc). The MOSFET exhibits a maximum on-resistance (Rds(on)) of 100mOhm at 8.4A and a 5V gate-source voltage. Key parameters include a gate charge (Qg) of 18 nC maximum at 5V and an input capacitance (Ciss) of 870 pF maximum at 25V. The device is housed in a TO-252-3, DPAK (2 leads + tab), SC-63 surface mount package, facilitating efficient thermal management with a power dissipation of 42W at 25°C (Tc). Operating across a temperature range of -55°C to 150°C (TJ), the IRLR024TRLPBF is suitable for various industrial, automotive, and power supply designs.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs100mOhm @ 8.4A, 5V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds870 pF @ 25 V

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