IRLL110PBF
MOSFET N-CH 100V 1.5A SOT223Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRLL110PBF is a power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 1.5A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 540mOhm at 900mA and 5V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 6.1 nC at 5V and input capacitance (Ciss) of 250 pF at 25V. With a maximum power dissipation of 2W (Ta) or 3.1W (Tc), the IRLL110PBF is suitable for surface mount applications, packaged in a SOT-223 (TO-261-4, TO-261AA) case. This MOSFET is utilized in industrial, automotive, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 900mA, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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