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IRLL110PBF

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IRLL110PBF

MOSFET N-CH 100V 1.5A SOT223

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix MOSFET N-Channel IRLL110PBF is a power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 1.5A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 540mOhm at 900mA and 5V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 6.1 nC at 5V and input capacitance (Ciss) of 250 pF at 25V. With a maximum power dissipation of 2W (Ta) or 3.1W (Tc), the IRLL110PBF is suitable for surface mount applications, packaged in a SOT-223 (TO-261-4, TO-261AA) case. This MOSFET is utilized in industrial, automotive, and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.5A (Tc)
Rds On (Max) @ Id, Vgs540mOhm @ 900mA, 5V
FET Feature-
Power Dissipation (Max)2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageSOT-223
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 25 V

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