IRLL014TR
MOSFET N-CH 60V 2.7A SOT223Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRLL014TR is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 2.7A at 25°C (Tc). The Rds(on) is specified at a maximum of 200mOhm when conducting 1.6A with a Vgs of 5V, and the device operates with a Vgs range of ±10V. Its low gate charge (Qg) of 8.4 nC at 5V and input capacitance (Ciss) of 400 pF at 25V contribute to fast switching characteristics. The MOSFET is housed in a SOT-223 package for surface mounting, offering power dissipation of 2W (Ta) or 3.1W (Tc). The Vishay Siliconix IRLL014TR is suitable for use in various industrial sectors, including automotive and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.6A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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