IRLL014PBF
MOSFET N-CH 60V 2.7A SOT223Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRLL014PBF is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 2.7A at 25°C (Tc). The SOT-223 package offers a surface mount capability with a maximum power dissipation of 2W (Ta) and 3.1W (Tc). Key electrical characteristics include a maximum Rds(on) of 200mOhm at 1.6A and 5V, and a gate charge (Qg) of 8.4 nC at 5V. Input capacitance (Ciss) is rated at 400 pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in industrial and automotive sectors for power management and control circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.6A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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