IRLIZ34GPBF
MOSFET N-CH 60V 20A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel Power MOSFET, part number IRLIZ34GPBF. This TO-220-3 packaged device features a 60V drain-source voltage and a continuous drain current of 20A at 25°C. The Rds(on) is specified at a maximum of 50mOhm at 12A and 5V gate-source voltage. Key parameters include a gate charge of 35 nC at 5V and input capacitance of 1600 pF at 25V. Power dissipation is rated at 42W. This MOSFET is designed for through-hole mounting and operates across a temperature range of -55°C to 175°C. It finds application in power management, motor control, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 12A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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