Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

IRLIZ34G

Banner
productimage

IRLIZ34G

MOSFET N-CH 60V 20A TO220-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix IRLIZ34G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 20A at 25°C case temperature, with a maximum power dissipation of 42W. Its low on-resistance of 50mOhm is achieved at 12A and 5V gate-source voltage. The device exhibits a gate charge (Qg) of 35 nC maximum at 5V Vgs and a typical input capacitance (Ciss) of 1600 pF at 25V Vds. Packaged in a TO-220-3 full pack, isolated tab configuration suitable for through-hole mounting, the IRLIZ34G operates across an extended temperature range of -55°C to 175°C. This MOSFET is commonly utilized in power supply units, motor control, and automotive applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack, Isolated Tab
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs50mOhm @ 12A, 5V
FET Feature-
Power Dissipation (Max)42W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
SI2333DDS-T1-GE3

MOSFET P-CH 12V 6A SOT23-3

product image
SUP90330E-GE3

MOSFET N-CH 200V 35.8A TO220AB

product image
SQJ443EP-T1_BE3

P-CHANNEL 40-V (D-S) 175C MOSFET