IRLI640G
MOSFET N-CH 200V 9.9A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRLI640G is a N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 200V and a continuous drain current (Id) of 9.9A at 25°C. The Rds On is specified at a maximum of 180mOhm at 5.9A and 5V gate drive. The device exhibits a typical gate charge (Qg) of 66 nC at 10V and input capacitance (Ciss) of 1800 pF at 25V. With a maximum power dissipation of 40W, it is suitable for use in industrial automation, power supplies, and motor control systems. The IRLI640G is housed in a TO-220-3 package, enabling through-hole mounting. It operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5.9A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
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