IRLI630G
MOSFET N-CH 200V 6.2A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRLI630G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a maximum drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 6.2A at 25°C (Tc). The low on-resistance (Rds On) of 400mOhm at 3.7A and 5V gate drive voltage, coupled with a maximum power dissipation of 35W (Tc), makes it suitable for demanding power management tasks. Key parameters include a gate charge (Qg) of 40 nC at 10V and input capacitance (Ciss) of 1100 pF at 25V. The component is housed in a TO-220-3 package with an isolated tab, facilitating through-hole mounting. Operating temperature range is from -55°C to 150°C. This MOSFET is utilized in industrial and automotive power control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 3.7A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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