IRLI620G
MOSFET N-CH 200V 4A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRLI620G is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 4A at 25°C (Tc). The MOSFET offers a maximum On-Resistance (Rds On) of 800mOhm at 2.4A and 5V Vgs. Key parameters include a Gate Charge (Qg) of 16 nC (max) at 10V Vgs and an Input Capacitance (Ciss) of 360 pF (max) at 25V Vds. With a maximum power dissipation of 30W (Tc), this component is suitable for through-hole mounting in a TO-220-3 package. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in industrial and power control applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.4A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
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