IRLI530GPBF
MOSFET N-CH 100V 9.7A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRLI530GPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 9.7A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 160mOhm at 5.8A and 5V Vgs. Key characteristics include a Gate Charge (Qg) of 28 nC at 5V and Input Capacitance (Ciss) of 930 pF at 25V. With a maximum power dissipation of 42W (Tc), it is suitable for operation across a temperature range of -55°C to 175°C (TJ). The IRLI530GPBF is supplied in a through-hole TO-220-3 Full Pack, Isolated Tab package. This MOSFET is commonly utilized in power supply, motor control, and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 5.8A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 930 pF @ 25 V |
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