IRLI520GPBF
MOSFET N-CH 100V 7.2A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRLI520GPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This through-hole component features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 7.2A at 25°C, with a maximum power dissipation of 37W (Tc). The Rds(on) is specified at 270mOhm maximum at 4.3A and 5V gate-source voltage. Key parameters include a gate charge (Qg) of 12 nC maximum at 5V and input capacitance (Ciss) of 490 pF maximum at 25V. Operating temperature ranges from -55°C to 175°C. This device is suitable for use in industrial and high-power switching applications. The component is supplied in a TO-220-3 package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 4.3A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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