IRLD120PBF
MOSFET N-CH 100V 1.3A 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRLD120PBF is an N-Channel Power MOSFET designed for high-power applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 1.3A at 25°C. With a maximum Power Dissipation (Pd) of 1.3W (Ta) and a low on-resistance (Rds On) of 270mOhm at 780mA and 5V, it offers efficient power switching. The MOSFET type is N-Channel, and it operates within a temperature range of -55°C to 175°C. Key parameters include a Gate Charge (Qg) of 12 nC at 5V and an Input Capacitance (Ciss) of 490 pF at 25V. The IRLD120PBF is housed in a 4-HVMDIP through-hole package. This component is suitable for use in power supply, motor control, and general-purpose switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 780mA, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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