IRLD120
MOSFET N-CH 100V 1.3A 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRLD120 is an N-Channel Power MOSFET designed for robust performance. This through-hole component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 1.3 A at 25°C. With a maximum on-resistance (Rds On) of 270 mOhm at 780 mA and 5 V gate-source voltage, it offers efficient switching. The device has a gate charge (Qg) of 12 nC maximum at 5 V and an input capacitance (Ciss) of 490 pF maximum at 25 V drain-source voltage. The 4-HVMDIP package, a 4-pin DIP with 0.300" spacing, facilitates reliable mounting. Operating across a junction temperature range of -55°C to 175°C, this MOSFET finds application in industrial and consumer electronics where reliable power switching is essential. The maximum power dissipation (Ta) is 1.3 W.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 780mA, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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