IRLD110
MOSFET N-CH 100V 1A 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRLD110 is an N-Channel Power MOSFET designed for high-voltage switching applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 1A at 25°C. The IRLD110 exhibits a maximum Rds On of 540mOhm at 600mA and 5V gate drive. With a gate charge (Qg) of 6.1 nC at 5V and input capacitance (Ciss) of 250 pF at 25V, it offers efficient switching characteristics. The device is packaged in a 4-HVMDIP (4-DIP, 0.300" width) and operates within a temperature range of -55°C to 175°C. Power dissipation is rated at 1.3W. This MOSFET is suitable for use in industrial and consumer electronics where reliable power switching is critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 600mA, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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