IRLD024
MOSFET N-CH 60V 2.5A 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRLD024 is a through-hole N-Channel Power MOSFET designed for applications requiring robust switching performance. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 2.5A at 25°C, with a maximum power dissipation of 1.3W (Ta) in a 4-HVMDIP package. The Rds On is specified at 100mOhm maximum at 1.5A and 5V gate drive. Key parameters include a Gate Charge (Qg) of 18 nC maximum at 5V and an input capacitance (Ciss) of 870 pF maximum at 25V. Operating temperature range is -55°C to 175°C (TJ). This device is suitable for use in industrial and power control applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |
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