IRL640STRR
MOSFET N-CH 200V 17A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRL640STRR is an N-Channel Power MOSFET designed for demanding applications. This TO-263 (D2PAK) packaged device features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 17A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 180mOhm at 10A and 5V gate drive. Key characteristics include a gate charge (Qg) of 66 nC (max) at 5V and input capacitance (Ciss) of 1800 pF (max) at 25V. Power dissipation is rated at 125W (Tc) and 3.1W (Ta). This component is suitable for use in power supply, motor control, and industrial automation sectors. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
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