IRL640L
MOSFET N-CH 200V 17A TO262-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRL640L is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 17A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 180mOhm at 10A and 5V gate drive. Key parameters include a Gate Charge (Qg) of 66 nC (max) at 5V and input capacitance (Ciss) of 1800 pF (max) at 25V. The TO-262-3 package with long leads facilitates through-hole mounting. This MOSFET is suitable for use in industrial power supplies, motor control, and other high-power switching applications. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
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