IRL640
MOSFET N-CH 200V 17A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel IRL640. This TO-220AB packaged power MOSFET features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 17A at 25°C. The Rds On is specified at a maximum of 180mOhm at 10A and 5V gate drive. Key parameters include a maximum gate charge (Qg) of 66 nC at 5V and input capacitance (Ciss) of 1800 pF at 25V. Maximum power dissipation is 125W (Tc). This component is suitable for applications requiring high voltage switching and is commonly found in industrial power supplies and motor control systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
Request a Quote
Clients Also Buy
SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3
SUP90330E-GE3
MOSFET N-CH 200V 35.8A TO220AB
SQJ443EP-T1_BE3
P-CHANNEL 40-V (D-S) 175C MOSFET
