IRL630STRRPBF
MOSFET N-CH 200V 9A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRL630STRRPBF is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 200V drain-source voltage (Vdss) and a continuous drain current (Id) of 9A at 25°C (Tc). With a maximum on-resistance (Rds On) of 400mOhm at 5.4A and 5V Vgs, it offers low conduction losses. The device supports a gate drive voltage range of 4V to 5V for optimal Rds On performance. Key parameters include a gate charge (Qg) of 40 nC at 10V and input capacitance (Ciss) of 1100 pF at 25V. Maximum power dissipation is rated at 74W (Tc) and 3.1W (Ta). The IRL630STRRPBF is housed in a TO-263-3 (D2PAK) surface-mount package, supplied on tape and reel. Its robust design makes it suitable for use in industrial, automotive, and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.4A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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