IRL630STRR
MOSFET N-CH 200V 9A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRL630STRR is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 200 V drain-source breakdown voltage and a continuous drain current rating of 9A at 25°C (Tc). The low on-resistance of 400mOhm is achieved at 5.4A and 5V gate-source voltage, with typical drive voltages ranging from 4V to 5V for maximum ON resistance. The device exhibits a gate charge of 40 nC at 10V and input capacitance (Ciss) of 1100 pF at 25V. Packaged in a TO-263 (D2PAK) surface-mount package, it offers excellent thermal performance with a maximum power dissipation of 74W (Tc) or 3.1W (Ta). Operating temperature range is from -55°C to 150°C (TJ). This MOSFET is suitable for use in power supplies, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.4A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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