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IRL630STRLPBF

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IRL630STRLPBF

MOSFET N-CH 200V 9A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRL630STRLPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 200V Drain-to-Source Voltage (Vdss) and a continuous drain current of 9A at 25°C (Tc). The Rds(On) is specified at a maximum of 400mOhm when driven at 5.4A and 5V Vgs. Key electrical parameters include a gate charge (Qg) of 40nC (max) at 10V Vgs and an input capacitance (Ciss) of 1100pF (max) at 25V Vds. The device operates over a temperature range of -55°C to 150°C (TJ). Packaged in a TO-263 (D2PAK) surface-mount configuration, it offers a power dissipation of 74W (Tc) and 3.1W (Ta). This MOSFET is suitable for applications in industrial power supplies, automotive systems, and motor control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Rds On (Max) @ Id, Vgs400mOhm @ 5.4A, 5V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 25 V

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