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IRL630STRL

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IRL630STRL

MOSFET N-CH 200V 9A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRL630STRL is an N-Channel Power MOSFET designed for demanding applications. This device features a 200V drain-source voltage rating and a continuous drain current capability of 9A at 25°C (Tc). The IRL630STRL is housed in a TO-263 (D2PAK) surface-mount package, offering efficient thermal performance with a maximum power dissipation of 74W (Tc). Key electrical specifications include a maximum Rds(on) of 400mOhm at 5.4A and 5V, a gate charge (Qg) of 40 nC at 10V, and input capacitance (Ciss) of 1100 pF at 25V. It operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply, motor control, and industrial automation applications. The component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 7 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Rds On (Max) @ Id, Vgs400mOhm @ 5.4A, 5V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 25 V

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