IRL630SPBF
MOSFET N-CH 200V 9A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRL630SPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vds) of 200V and a continuous Drain Current (Id) of 9A at 25°C (Tc). The low on-resistance of 400mOhm at 5.4A and 5V (Vgs) minimizes conduction losses, while the high power dissipation capability of 74W (Tc) ensures reliable operation under heavy loads. Key parameters include a Gate Charge (Qg) of 40 nC at 10V and an input capacitance (Ciss) of 1100 pF at 25V. The device is housed in a TO-263 (D2PAK) surface-mount package, suitable for high-density board designs. Operating temperature range is -55°C to 150°C (TJ). This component is utilized in industrial and power control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.4A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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