IRL630PBF-BE3
MOSFET N-CH 200V 9A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRL630PBF-BE3 is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 9 A at 25°C. With a maximum power dissipation of 74 W at the case temperature, it offers robust thermal performance. The Rds On is specified at a maximum of 400 mOhm when the drain current is 5.4 A and gate-source voltage is 5 V. Key parameters include a gate charge (Qg) of 40 nC at 10 V and input capacitance (Ciss) of 1100 pF at 25 V. The MOSFET is housed in a TO-220AB package, suitable for through-hole mounting. This component is commonly utilized in industrial power supplies, motor control, and automotive electronics. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.4A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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