IRL630PBF
MOSFET N-CH 200V 9A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRL630PBF is an N-Channel Power MOSFET designed for robust performance in demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 9 A at 25°C. The device exhibits a maximum On-Resistance (Rds On) of 400 mOhm at 5.4 A and 5 V gate drive. Key parameters include a Gate Charge (Qg) of 40 nC at 10 V and an Input Capacitance (Ciss) of 1100 pF at 25 V. The MOSFET is housed in a TO-220AB package, offering a maximum power dissipation of 74 W at 25°C. The operating temperature range is -55°C to 150°C. This component is suitable for use in industrial power supplies, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.4A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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