IRL630
MOSFET N-CH 200V 9A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRL630, an N-Channel Power MOSFET, offers a Vdss rating of 200 V and a continuous drain current of 9 A at 25°C. This through-hole component, housed in a TO-220AB package, features a maximum Rds(on) of 400 mOhm at 5.4 A and 5 V gate-source voltage. With a maximum power dissipation of 74 W at 25°C, it is suitable for applications demanding efficient switching and power handling. Key parameters include a gate charge (Qg) of 40 nC at 10 V and input capacitance (Ciss) of 1100 pF at 25 V. Operating temperature range is -55°C to 150°C (TJ). This MOSFET finds application in industrial automation, power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.4A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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