IRL620STRLPBF
MOSFET N-CH 200V 5.2A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRL620STRLPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain current (Id) of 5.2 A at 25°C (Tc). The device exhibits a maximum Rds(On) of 800 mOhm at 3.1 A and 10 V, with a gate threshold voltage (Vgs(th)) of 2 V at 250 µA. Key characteristics include a gate charge (Qg) of 16 nC at 5 V and input capacitance (Ciss) of 360 pF at 25 V. With a maximum power dissipation of 50 W (Tc) and 3.1 W (Ta), it is housed in a TO-263 (D2PAK) surface mount package, supplied on tape and reel. Operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in industrial power supplies, automotive systems, and motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
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