IRL620PBF-BE3
MOSFET N-CH 200V 5.2A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRL620PBF-BE3 is an N-Channel Power MOSFET designed for demanding applications. This component features a 200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.2A at 25°C (Tc). With a maximum power dissipation of 50W (Tc), it is suitable for high-power switching applications. The device exhibits a low on-resistance (Rds On) of 800mOhm at 3.1A and 5V gate-source voltage. Key parameters include a gate charge (Qg) of 16nC (Max) at 5V and an input capacitance (Ciss) of 360pF (Max) at 25V. The MOSFET operates reliably across a wide temperature range of -55°C to 150°C (TJ). Supplied in a TO-220AB package, this through-hole mounted component is commonly utilized in power supply units, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 3.1A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
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